Composition-dependent electrical transport properties of Pb50Te52 doped with PbI2 prepared by HPHT

Journal of Alloys and Compounds

Volumn 458, Issue 1-2, 2008, Pages 428-431

  Guo, Jiangang ^a   Jia, Xiaopeng ^a,b   Su, Taichao ^a   Dong, Nan ^a   Ma, Hongan ^a  

^a JILIN UNIVERSITY   (China)

^b Henan Polytechnic   (China)

Author keywords

HPHT; Lead telluride; PbI2; Thermoelectric

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; HIGH PRESSURE EFFECTS; PHASE COMPOSITION; SEEBECK COEFFICIENT;

ELECTRICAL TRANSPORT PROPERTIES; LEAD TELLURIDE; POWER FACTOR; ROOM TEMPERATURE;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 42949172877     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.03.121     Document Type: Article

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