Effect of non-stoichiometry on oxidation processes in n-type PbTe thin films

Thin Solid Films

Volumn 423, Issue 2, 2003, Pages 257-261

  Rogacheva, E I ^a   Tavrina, T V ^a   Nashchekina, O N ^a   Volobuev, V V ^a   Fedorov, A G ^a   Sipatov, A Yu ^a   Dresselhaus, M S ^b  

^a NATIONAL TECHNICAL UNIVERSITY   (Ukraine)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Electrical properties and measurements; Lead telluride; Oxidation; Surface and interface states

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DIFFUSION; ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; LEAD; METALLIC FILMS; OXIDATION; SEMICONDUCTOR DOPING; SUPERLATTICES; TELLURIUM;

CHALCOGENIDES;

THIN FILMS;

EID: 0037439363     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01040-4     Document Type: Article

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