Exciton relaxation and level repulsion in GaAs/AlxGa 1-xAs quantum wires

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 20, 2004, Pages

  Feltrin, A ^a   Kaitouni, R Idrissi ^a   Crottini, A ^a   Dupertuis, M A ^a   Staehli, J L ^a   Deveaud, B ^a   Savona, V ^a   Wang, X L ^b   Ogura, M ^b  

^a EPFL   (Switzerland)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM;

ARTICLE; CORRELATION ANALYSIS; KINETICS; LOW TEMPERATURE; MICROSCOPY; MOLECULAR INTERACTION; PHONON; PHOTOLUMINESCENCE; QUANTUM MECHANICS; SPECTROSCOPY; STATISTICAL ANALYSIS;

EID: 42749101618     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.205321     Document Type: Article

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44. This approximation is based on a comparison between the electron and hole confinement wave functions calculated for a V groove quantum wire.
45. This factorization has been checked by comparing the scattering rates with the ones obtained from a more elaborated approximation, where spatial and energetic coordinates are no more separable.