Effect of disorder on the temperature dependence of radiative lifetimes in v-groove quantum wires

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 4, 1999, Pages 2910-2914

  Oberli, D Y ^a   Dupertuis, M A ^a   Reinhardt, F ^a   Kapon, E ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001284184     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.2910     Document Type: Article

References (34)

1. V. M. Agranovich and O. A. Dubovskii, Pi’ma Zh. Eksp. Teor. Fiz. 3, 345 (1966) [ JETP Lett. 3, 223 (1966)].
2. E. Hanamura, Phys. Rev. B 38, 1228 (1988).
3. L. C. Andreani, F. Tassone, and F. Bassani, Solid State Commun. 77, 641 (1991).
4. D. S. Citrin, Phys. Rev. Lett. 69, 3393 (1992).
5. D. S. Citrin, Phys. Rev. B 47, 3832 (1992).
6. B. Deveaud, et al., Phys. Rev. Lett. 67, 2355 (1991).
7. J. Feldmann, et al., Phys. Rev. Lett. 59, 2337 (1987).
8. M. Gurioli, et al., Phys. Rev. B 44, 3115 (1991).
9. J. Martinez-Pastor, et al., Phys. Rev. B 47, 10 456 (1993).
10. D. Gershoni, et al., Phys. Rev. B 50, 8930 (1994).
11. H. Akiyama, et al., Phys. Rev. Lett. 72, 924 (1994);
12. Phys. Rev. Lett.H. Akiyama72, 2123(E) (1994).
13. A. Gustafsson, F. Reinhardt, G. Biasiol, and E. Kapon, Appl. Phys. Lett. 67, 3673 (1995).
14. R. S. Meltzer and R. M. Wood, Appl. Opt. 16, 1432 (1977).
15. F. Vouilloz, D. Y. Oberli, M.-A. Dupertuis, A. Gustafsson, F. Reinhardt, and E. Kapon, Phys. Rev. Lett. 78, 1580 (1997);
16. F. VouillozD. Y. OberliM.-A. DupertuisA. GustafssonF. ReinhardtE. KaponPhys. Rev. B 57, 12 378 (1998).
17. The QWR-PL is spectrally integrated over a 14 meV bandwidth centered at the maximum intensity. Within this spectral window the substrate-PL was much weaker than the QWR-PL and did not influence the determination of the QWR decay time.
18. J. E. Fouquet and R. D. Burnham, IEEE J. Quantum Electron. QE-22, 1799 (1986).
19. The radiative efficiency is assumed to be equal to unity at 8 K because the PL intensity is constant from 4.5 K to about 15 K.
20. T. Ogawa and T. Takagahara, Phys. Rev. B 44, 8138 (1991).
21. D. Y. Oberli, F. Vouilloz, M.-A. Dupertuis, C. Fall, and E. Kapon, Nuovo Cimento D 17, 1641 (1995).
22. K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, and G. Weimann, Appl. Phys. Lett. 64, 3320 (1994);
23. Appl. Phys. Lett.D. Gammon, E. S. Snow, and D. S. Katzer, 67, 2391 (1995), and references therein.
24. F. Vouilloz, S. Wiesendanger, D. Y. Oberli, B. Dwir, F. Reinhardt, and E. Kapon, Physica E 2, 862 (1998).
25. R. Zimmermann, E. Runge, and F. Grosse, Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), Vol. 3, p. 1935.
26. A similar expression is calculated in Ref. 5 for the case of a localized exciton in a quantum well.
27. E. I. Rashba and G. E. Gurgenishvili, Fiz. Tverd. Tela 4, 1029 (1962) [Sov. Phys. Solid State 4, 759 (1962)].
28. C. C. Philipps, R. Eccleston, and S. R. Andrews, Phys. Rev. B 40, 9760 (1989).
29. B. K. Ridley, Phys. Rev. B 41, 12 190 (1990).
30. Under our growth conditions a background p doping of the (Formula presented) layers was found and measured to be about (Formula presented) for (Formula presented) on a reference sample.
31. Al. L. Efros, C. Wetzel, and J. M. Worlock, Phys. Rev. B 52, 8384 (1995).
32. R. Zimmermann and E. Runge, J. Lumin. 60&61, 320 (1994).
33. H. Gotoh, H. Ando, and T. Takagahara, J. Appl. Phys. 81, 1785 (1997).
34. J. Bellessa, et al., Phys. Rev. B 58, 9933 (1998).