Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 16, 2004, Pages

  Volkmann, T ^a   Ahr, M ^a   Biehl, M ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; DIMERIZATION; GROWTH RATE; KINETICS; MOLECULAR MODEL; MONTE CARLO METHOD; REGULATORY MECHANISM; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 42749098948     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.165303     Document Type: Article

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