Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method

Journal of Crystal Growth

Volumn 310, Issue 11, 2008, Pages 2697-2701

  Bairava Ganesh, R ^a,b   Matsuo, Hitoshi ^a   Kawamura, Takahiro ^a   Kangawa, Yoshihiro ^a,c   Arafune, Koji ^d   Ohshita, Yoshio ^d   Yamaguchi, Masafumi ^d   Kakimoto, Koichi ^a,c  

^a KYUSHU UNIVERSITY   (Japan)

^b ANNA UNIVERSITY   (India)

^c KYUSHU UNIVERSITY   (Japan)

^d TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

A1. Directional solidification; A1. Impurities; A2. Accelerated crucible rotation technique; B3. Solar cells

Indexed keywords

CARBON; SILICON COMPOUNDS; SOLAR CELLS; SOLIDIFICATION;

ACCELERATED CRUCIBLE ROTATION TECHNIQUE; GROWTH INDUCED STRIATION METHOD; MULTICRYSTALLINE SILICON;

CRYSTAL GROWTH;

EID: 42749085199     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.01.049     Document Type: Article

References (20)

1. Scheel H.J., and Müller-Krumbhaar H. J. Crystal Growth 49 (1980) 291
2. Lan C.W., and Chian J.H. J. Crystal Growth 203 (1999) 286
3. Ravi Shankar P.S., Deshmukes J.P., and Wilcox W.R. J. Crystal Growth 71 (1985) 579
4. Distanov V.E., and Kirdyashkin A.G. Inorg. Mater. 39 (2003) 672
5. Yeckel A., and Derby J.J. J. Crystal Growth 209 (2000) 734
6. Schulz-Dubois E.O. J. Crystal Growth 12 (1972) 81
7. Zhou J., Larrousse M., Wilcox W.R., and Regel L.L. J. Crystal Growth 128 (1993) 173
8. Görnert P., Bornmann S., and Hergt R. Phys. Stat. Sol. A 35 (1976) 583
9. Damen J.P.M., and Robertson J.M. J. Crystal Growth 16 (1972) 50
10. In: Scheel H.J., Scheel H.J., and Fukuda T. (Eds). Crystal Growth Technology (2003), Wiley, England 69
11. Iino E., Fusegawa I., and Yamagishi H. Appl. Spectrosc. 47 (1993) 1488
12. In: Müller G., and Freyhardt H.C. (Eds). Convection and Inhomogenities in Crystal Growth from the Melt Vol. 12 (1988), Springer, Berlin 78
13. Möller H.J., Long L., Werner M., and Yang D. Phys. Stat. Sol. A 171 (1999) 175
14. Kozo Fujiwara, Yoshikazu Obinata, Toru Ujihara, Noritaka Usami, Gen Sasaki, and Kazuo Nakajima. J. Crystal Growth 262 (2004) 124
15. Yuren Wang, and Koichi Kakimoto. Microelectron. Eng. 56 (2001) 143
16. Kvande R., Mjøs O., and Ryningen B. Mater. Sci. Eng. A 413-414 (2005) 545
17. Newman R.C. Mater. Sci. Eng. B 36 (1996) 1
18. The American Society for Testing and Materials (ASTM), Designation: F 1391-93, 2000.
19. Müller G., and Ostrogorsky A. In: Hurle D.T.J. (Ed). Handbook of Crystal Growth, Part 2b (1994), North-Holland, Amsterdam 775
20. Lynn A., and Wilson O. J. Crystal Growth 48 (1980) 451