Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response

Journal of Materials Science

Volumn 34, Issue 17, 1999, Pages 4233-4237

  Kishimoto, A ^a   Nakamichi, A ^b   Nakamura, Y ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING (DEFORMATION); CRACK PROPAGATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; FRACTURE MECHANICS; MECHANICAL VARIABLES MEASUREMENT; PIEZOELECTRICITY; SINGLE CRYSTALS; STRESSES;

BENDING STRAIN; CURRENT DROP; FRACTURE FORESEEING TREATMENT; INDENTATION FRACTURE; PIEZORESISTANCE EFFECT;

SILICON NITRIDE;

EID: 0032592829     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004698618485     Document Type: Article

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