Boron and nitrogen co-doped ZnO thin films for opto-electronic applications

Ceramics International

Volumn 34, Issue 4, 2008, Pages 1011-1015

  Liu, G X ^a,b   Shan, F K ^a,b   Lee, W J ^b   Shin, B C ^b   Kim, H S ^c   Kim, J H ^d  

^a QINGDAO UNIVERSITY   (China)

^b Dong Eui University   (South Korea)

^c Korea Maritime University   (South Korea)

^d Chonnam National University   (South Korea)

Author keywords

BN doped ZnO; Properties and stokes shift; Thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); ENERGY GAP; OPTOELECTRONIC DEVICES; PULSED LASER DEPOSITION; SURFACE MORPHOLOGY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

HALL MEASUREMENTS; STOKES SHIFTS; TRANSPARENT CONDUCTIVE OXIDES;

THIN FILMS;

EID: 42649110382     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2007.09.095     Document Type: Article

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