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Volumn 354, Issue 19-25, 2008, Pages 2324-2328
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Ultra-thin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange
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Author keywords
Crystal growth; Crystallization; Nucleation; Raman scattering
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Indexed keywords
CRYSTAL GROWTH;
CRYSTALLIZATION;
EUTECTICS;
GRAIN GROWTH;
NUCLEATION;
POLYSILICON;
RAMAN SCATTERING;
SYNTHESIS (CHEMICAL);
CRYSTALLINE QUALITY;
EUTECTIC TEMPERATURE;
LAYER EXCHANGE PROCESS;
ULTRATHIN FILMS;
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EID: 42649110040
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2007.09.038 Document Type: Article |
Times cited : (8)
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References (19)
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