The application of a statistical methodology to investigate deposition parameters in CdTe/CdS solar cells grown by MOCVD

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 7, 2008, Pages 639-645

  Rowlands, R L ^a   Barrioz, V ^a   Jones, E W ^a   Irvine, S J C ^a   Lamb, D A ^a  

^a BANGOR UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARTIAL PRESSURE; PASSIVATION; POLYCRYSTALLINE MATERIALS; SOLAR CELLS; STATISTICAL METHODS;

CADMIUM SULPHIDE (CDS); CADMIUM TELLURIDE (CDTE); DEPOSITION TEMPERATURE; PARTIAL PASSIVATION;

CADMIUM ALLOYS;

EID: 42649105814     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9412-4     Document Type: Article

References (12)

1. 1. T.L. Chu, S.S. Chu, C. Ferekides, J. Britt, C.Q. WU, in Proceedings of the 2nd ICEM, 90, 345 (1990)
2. 2. R.A. Berrigan S.J.C. Irvine A. Stafford 1998 J. Cryst. Growth 195 718 724 10.1016/S0022-0248(98)00684-8 1:CAS:528:DyaK1cXotFGmtb0%3D R.A. Berrigan, S.J.C. Irvine, A. Stafford, J. Cryst. Growth 195, 718–724 (1998)
3. 3. T.L. Chu S.S. Chu J. BRITT C. Ferekides C. Wang C.Q. Wu H.S. Ullal 1992 IEEE Electron Device Lett. 13 303 304 10.1109/55.145061 1:CAS:528:DyaK38XktFWns7o%3D T.L. Chu, S.S. Chu, J. BRITT, C. Ferekides, C. Wang, C.Q. Wu, H.S. Ullal, IEEE Electron Device Lett. 13, 303–304 (1992)
4. 4. S. Kumazawa S. Shibutani T. Nishio T. Aramoto H. Higuchi T. Artia A. Hanafusa K. Omura M. Murozono H. Takakura 1997 Solar Energy Mater. Solar Cells 49 205 212 10.1016/S0927-0248(97)00196-7 1:CAS:528:DyaK2sXmvFKms7c%3D S. Kumazawa, S. Shibutani, T. Nishio, T. Aramoto, H. Higuchi, T. Artia, A. Hanafusa, K. Omura, M. Murozono, H. Takakura, Solar Energy Mater. Solar Cells 49, 205–212 (1997)
5. 5. X. Wu 2004 Solar Energy 77 6 803 814 10.1016/j.solener.2004.06.006 1:CAS:528:DC%2BD2cXhtVektrbM X. Wu, Solar Energy 77 (6), 803–814 (2004)
6. 6. T.M. Morrison, Engineering Science and Educational Journal, 6, 123 (1997)
7. 7. C-H. Lee O. Ok Park 2004 Vacuum 72 411 418 10.1016/j.vacuum.2003.10.001 1:CAS:528:DC%2BD3sXpvFyntL4%3D C-H. Lee, O. Ok Park, Vacuum 72, 411–418 (2004)
8. 8. T. Cano Del A. Sansano M.A. Rodriguez-Perez A. Gonzalez J.A. Desaja 2004 Measurement 35 257 268 10.1016/j.measurement.2003.09.002 T. Del Cano, A. Sansano, M.A. Rodriguez-Perez, A. Gonzalez, J.A. Desaja, Measurement 35, 257–268 (2004)
9. 9. C-H. Li M-J. Tsai C-D Yang 2007 Opt. Laser Technol. 39 4 786 795 10.1016/j.optlastec.2006.02.005 C-H. Li, M-J. Tsai, C-D Yang, Opt. Laser Technol. 39 (4), 786–795 (2007)
10. 10. Y.H. Hung M.L. Huang C.H. Chang 2006 Microelectron. Reliability 46 136 1183 1188 10.1016/j.microrel.2005.09.008 1:CAS:528:DC%2BD28XksF2jurw%3D Y.H. Hung, M.L. Huang, C.H. Chang, Microelectron. Reliability 46 (136), 1183–1188 (2006)
11. 11. V. Barrioz, R.L. Rowlands, S.J.C. Irvine, in proceedings of the 20th EUPVSEC, Barcelona, (2005), June 6–10, p.1918
12. 12. V. Barrioz S.J.C. Irvine E.W. Jones R.L. Rowlands D.A. Lamb 2007 Thin Solid Films 515 5808 5813 10.1016/j.tsf.2006.12.043 1:CAS:528:DC%2BD2sXkslKmu7c%3D V. Barrioz, S.J.C. Irvine, E.W. Jones, R.L. Rowlands, D.A. Lamb, Thin Solid Films 515, 5808–5813 (2007)