Self-consistent full-band Monte Carlo device simulation for strained nMOSFETs incorporating vertical quantization, multi-subband, and different channel orientation effects

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 55-58

  Hane, Masami ^a   Ikezawa, Takeo ^a   Kawada, Michihito ^a   Ezaki, Tatsuya ^b   Yamamoto, Toyoji ^a  

^a NEC CORPORATION   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Channel orientation; Device simulation; Monte Carlo; Multi subband; Strained MOSFETs

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; QUANTUM THEORY; SEMICONDUCTOR DEVICES;

CHANNEL ORIENTATION; DEVICE SIMULATION;

MOSFET DEVICES;

EID: 42549128343     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282837     Document Type: Conference Paper

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6. T Ezaki et al., Proc. of SISPAD, p.53 (2004)