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Applied Physics Letters

Volumn 58, Issue 25, 1991, Pages 2942-2944

Sidewall damage in a silicon substrate caused by trench etching

(1) Hamamoto, Takeshi a

a TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343415842 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.104729 Document Type: Article

Times cited : (15)

References (13)

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2
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3
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- (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 746
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4
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- (1986) 1986 IEEE International Solid-State Circuits Conference, Digest of Technical Papers , pp. 272
- Furuyama, T.¹ Ohsawa, T.² Watanabe, Y.³ Ishiuchi, H.⁴ Tanaka, T.⁵ Ohuchi, K.⁶ Tango, H.⁷ Natori, K.⁸ Ozawa, O.⁹

5
- 0024903015
- (IEEE, New York)
- (1989) 1989 IEEE International Solid-State Circuits Conference, Digest of Technical Papers , pp. 248
- Fujii, S.¹ Ogihara, M.² Shimizu, M.³ Yoshida, M.⁴ Numata, K.⁵ Hara, T.⁶ Watanabe, S.⁷ Sawada, S.⁸ Mizuno, T.⁹ Kumagai, K.¹⁰ Yoshikawa, S.¹¹ Kaki, S.¹² Saito, Y.¹³ Aochi, H.¹⁴ Hamamoto, T.¹⁵ Toita, K.¹⁶

6
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- Oehrlein, G.S.¹

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- Lang, D.V.¹

8
- 84950593475
- (IEEE, San Diego)
- (1986) 1986 Symposium on VLSI Technology Technical Digest , pp. 6
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- (1983) Jpn. J. Appl. Phys. , vol.22 , pp. 281
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- Wunstel, K.¹ Wagner, P.²

11
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- (1983) Physica B , vol.116 , pp. 297
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- (1974) Solid-State Electron. , vol.17 , pp. 193
- Yau, L.D.¹ Sah, C.T.²

13
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- Sah, C.T.¹ Wang, C.T.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.