Depth profiling of defects in argon irradiated silicon using positron beam facility at Kalpakkam

Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 650-652

  Amarendra, G ^a   Venugopal Rao, G ^a   Nair, K G M ^a   Viswanathan, B ^a  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

Depth Profiling; Ion Beam Induced Damage; Positron Beam; Semiconductors

Indexed keywords

ARGON; COMPUTER AIDED ANALYSIS; DEFECTS; ION BEAMS; IRRADIATION;

DEPTH PROFILING; ION BEAM INDUCED DAMAGE; POSITRON BEAM; SOFTWARE PACKAGE TRIM; SOFTWARE PACKAGE VEPFIT;

SEMICONDUCTING SILICON;

EID: 4243896957     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.255-257.650     Document Type: Article

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