Positron lifetime study on semiconductor thin films

Materials Science Forum

Volumn 255-257, Issue , 1997, Pages 714-717

  Suzuki, R ^a   Ohdaira, T ^a   Uedono, A ^b   Ishibashi, S ^a   Matsuda, A ^a   Yoshida, S ^a   Ishida, Y ^a   Niki, S ^a   Fons, P J ^a   Mikado, T ^a   Yamazaki, T ^a   Tanigawa, S ^b   Cho, Y K ^c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

A Si:H; CuInSe2; Fluorine Ion Implanted Si; GaN; Positron Lifetime Spectroscopy; SiC; Slow Positron Beam; Thin Film

Indexed keywords

CHARGED PARTICLES; COPPER COMPOUNDS; CRYSTAL DEFECTS; DOPPLER EFFECT; ION IMPLANTATION; PARTICLE BEAMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; THIN FILMS;

POSITRON LIFETIME SPECTROSCOPY; PULSED SLOW POSITRON BEAM;

SEMICONDUCTING FILMS;

EID: 4243686385     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.255-257.714     Document Type: Article

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