Virtual reactor: a new tool for SiC bulk crystal growth study and optimization

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 57-60

  Bogdanov, M V ^a   Bord, O V ^a   Galyukov, A O ^a   Karpov, S Yu ^a   Kulik, A V ^a   Kochuguev, S K ^a   Komissarov, A E ^a   Ofengeim, D Kh ^a   Serkov, A M ^a   Tsiryulnikov, A V ^a   Zhmakin, I A ^a   Ramm, M S ^b   Zhmakin, A I ^b   Makarov, Yu N ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; CRUCIBLES; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GRAPHITE; HEAT TRANSFER; MASS TRANSFER; POWDERS; SUBLIMATION; THERMAL INSULATION; THERMAL STRESS;

DISLOCATION DENSITY DISTRIBUTION; SUBLIMATION GROWTH; THERMOELASTIC STRESS; VIRTUAL REACTOR;

SILICON CARBIDE;

EID: 4243680483     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.57     Document Type: Article

References (5)

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2. M. Selder, L. Kadinski, Yu. Makarov, F. Durst, P. Wellman, T. Straubinger, D. Hofmann, S. Karpov, M. Ramm, J.Cryst.Growth 211 (2000) p.333.
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