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Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

The role of antiphase domain boundaries in Si epitaxy by ultrahigh vacuum chemical vapor deposition from SiH4 or SiH2Cl2 on Si(100)-(2×1)

(5) Spitzmuller V a Fehrenbacher, M a Haug, F a Rauscher, H a Behm, R J a

a UNIVERSITY OF ULM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE DOMAIN BOUNDARY; DIFFUSING SPECIES; EPITAXIAL MULTILAYERS; FLAT SUBSTRATES; HETEROGENEOUS NUCLEATION; INTERMEDIATE TEMPERATURES; MULTILAYER GROWTH; POTENTIAL MINIMA; SI EPITAXY; SI(1 0 0); ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION; UNDERLYING LAYERS;

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; MULTILAYERS; SILICON; SOIL CONSERVATION; ULTRAHIGH VACUUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4243611898 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s003390051289 Document Type: Article

Times cited : (3)

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