A few electrons per ion scenario for the B = 0 metal-insulator transition in two dimensions

Solid State Communications

Volumn 110, Issue 10, 1999, Pages 581-586

  Klapwijk, T M ^a,b   Das Sarma, S ^a,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c Bldg 142   (United States)

Author keywords

A. Quantum wells; A. Semiconductors; D. Electron electron interactions; D. Electronic transport; D. Quantum localization

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; MOSFET DEVICES; SEMICONDUCTING SILICON; THERMAL EFFECTS;

ELECTRON-ELECTRON INTERACTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0344462716     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00024-1     Document Type: Article

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