Ge concentration effect on the dislocation mobility in the bulk SiGe alloy single crystals

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 419-424

  Iunin, Yu L ^a   Orlov, V I ^a   Dyachenko Dekov, D V ^a   Abrosimov, N V ^a,b   Rossolenko, S N ^a,b   Schroder W ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Dislocation Mobility; Point Defects; SiGe Alloys

Indexed keywords

DISLOCATIONS (CRYSTALS); GERMANIUM; POINT DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS; CRYSTAL GROWTH FROM MELT; REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SILICON ALLOYS; STRESSES; THERMAL EFFECTS;

BULK SINGLE CRYSTALS; DISLOCATION KINKS; DISLOCATION MOBILITY; DISLOCATION MOTION; DISLOCATION VELOCITIES; GE CONCENTRATIONS; INTERMITTENT LOADING; STRESS DEPENDENCE;

SI-GE ALLOYS; DISLOCATIONS (CRYSTALS);

DISLOCATION KINK PAIR FORMATION; DISLOCATION MOBILITY; INTERMITTENT LOADING TECHNIQUE;

EID: 4243384150     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.419     Document Type: Article

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