Comparison of a standard and a Schottky dual gate mosfet

Journal of Electrical Engineering

Volumn 59, Issue 2, 2008, Pages 81-85

  Racko, Juraj ^a   Granzner, Ralf ^b   Schwierz, Frank ^b   Breza, Juraj ^a   Donoval, Daniel ^a   Kučera, Ondrej ^a   Pinteš, Peter ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

MOSFET; Schottky dual gate

Indexed keywords

EID: 42249084082     PISSN: 13353632     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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2. ISE TCAD Release 10, Volume 4a, DESSIS.
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5. http://www.ee.buffalo.edu/faculty/cartwright/java_applets/ quantum/numerov/index.html-Quantum-Electronic: Numerov Quantum Well Calculator.
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