A method to determine the origin of remaining particles after mask blank cleaning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Kapila, Vivek ^a   Eichenlaub, Sean ^a   Rastegar, Abbas ^a   John, Arun ^a   Marmillion, Pat ^b  

^a SEMATECH   (United States)

^b IBM   (United States)

Author keywords

EUVL; Mask cleaning; Zeta potential

Indexed keywords

MASK CLEANING; POTENTIAL MAPS;

EXTREME ULTRAVIOLET LITHOGRAPHY; PH EFFECTS; SUBSTRATES; ZETA POTENTIAL;

MASKS;

EID: 42149180688     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.746798     Document Type: Conference Paper

References (5)

1. P. Kearny, R. Randive, A. Ma, D. Krick, A. Weaver, I. Reiss, D. Abraham, P. Mirkarimi, E. Spiller, "Overcoming substrate defect decoration effects in EUVL mask development," Proceedings of SPIE, 5567, 800-806 (2204).
2. A. Rastegar, S. Eichenlaub, "Removal of 30 nm particles on quartz surfaces," SEMICON Korea, STS Vol. 2, 93 (2007).
3. A. Rastegar, S. Eichenlaub, V. Kapila, A. Kadaksham, P. Marmillion, "New requirements for the cleaning of EUV mask blanks," Proceedings of SPIE, 6517, 65171D (2007).
4. V. Kapila, A. Rastegar, Y. Ikuta, S. Eichenlaub, K. Goncher, P. Marmillion, "Cleaning of MoSi multilayer mask blanks for EUVL," Proceedings of SPIE, 6349, 63492W-1 (2006).
5. P.C. Hiemenz, R. Rajagopalan, Principles of Colloid and Surface Chemistry, Marcel Dekker Inc., New York (1997).