Ge photodetectors integrated in Si waveguides

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6898, Issue , 2008, Pages

  Vivien, Laurent ^a   Rouvière, Mathieu ^a,b   Fédéli, Jean Marc ^c   Marris Morini, Delphine ^a   Damlencourt, Jean François ^c   El Melhaoui, Loubna ^c   Cassan, Eric ^a   Le Roux, Xavier ^a   Crozat, Paul ^a   Mangeney, Juliette ^a   Laval, Suzanne ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

Germanium; Integrated photodetector; Microphotonics; Optical interconnects; Silicon; Silicon on insulator (SOI)

Indexed keywords

ELECTROLYSIS; ELECTROMAGNETIC PULSE; ELECTROMAGNETIC WAVES; GERMANIUM; MARKOV PROCESSES; METALLIZING; MICROFLUIDICS; NONMETALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONICS; SILICON; TIME MEASUREMENT; ULTRASHORT PULSES; WAVEGUIDES;

(P ,P ,T) MEASUREMENTS; ELECTRODE SPACINGS; EXPERIMENTAL CHARACTERISTICS; EXPERIMENTAL INVESTIGATIONS; FEMTOSECOND (FS) PULSES; GERMANIUM ON SILICON (GOS); METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS; METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURE; RESPONSIVITY; RIB WAVEGUIDES; SILICON PHOTONICS; SILICON-ON-INSULATOR (SOI) WAVEGUIDES;

SEMICONDUCTING SILICON;

EID: 42149154758     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.765701     Document Type: Conference Paper

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