A perpendicular spin torque switching based MRAM for the 28 nm technology node

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 187-190

  Klostermann, U K ^a   Angerbauer, M ^a   Gruning U ^a   Kreupl, F ^a   Ruhrig M ^b   Dahmani, F ^c   Kund, M ^a   Muller G ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b SIEMENS AG   (Germany)

^c Altis Semiconductor   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ELECTRON DEVICES; MAGNETIC STORAGE; NANOTECHNOLOGY; SETTLING TANKS; SPIN DYNAMICS; TECHNOLOGY;

CELL LAYOUTS; IN-PLANE; PERPENDICULAR ANISOTROPY; PROGRAMMING CURRENTS; SPIN TORQUE; SPIN-TORQUE SWITCHING; TECHNOLOGY NODES;

RANDOM ACCESS STORAGE;

EID: 42149131790     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418898     Document Type: Conference Paper

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