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Volumn , Issue , 2006, Pages

Status and outlook of MRAM memory technology (invited)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; INDUSTRIAL RESEARCH; RANDOM ACCESS STORAGE; TECHNOLOGY;

EID: 46049086047     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346850     Document Type: Conference Paper
Times cited : (33)

References (7)
  • 2
    • 4444301072 scopus 로고    scopus 로고
    • Low-current blocking temperature writing of double-barrier MRAM cells
    • July
    • Jianguo Wang and P.P. Freitas, "Low-current blocking temperature writing of double-barrier MRAM cells," IEEE Trans. Magn. vol. 40, pp. 2622-4, July 2004.
    • (2004) IEEE Trans. Magn , vol.40 , pp. 2622-2624
    • Wang, J.1    Freitas, P.P.2
  • 3
    • 18844448913 scopus 로고    scopus 로고
    • R. Sinclair, A. Pohm, Scaling and power of thermally written MRAM, Proc. 2004 Non-Volatile Memory Technology Symposium (IEEE Cat. No.04EX947)p.110-17 (2004).
    • R. Sinclair, A. Pohm, "Scaling and power of thermally written MRAM," Proc. 2004 Non-Volatile Memory Technology Symposium (IEEE Cat. No.04EX947)p.110-17 (2004).
  • 5
    • 34250772878 scopus 로고    scopus 로고
    • Resistance Drift of Aluminum Oxide Magnetic Tunnel Junction Devices
    • in press
    • Pon S. Ku and Young Chung, "Resistance Drift of Aluminum Oxide Magnetic Tunnel Junction Devices," IEEE International Reliability Physics Symposium, 2006, pp 437 - 441 (in press).
    • (2006) IEEE International Reliability Physics Symposium , pp. 437-441
    • Ku, P.S.1    Chung, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.