3D Mask modeling with Oblique incidence and Mask Corner rounding effects for the 32nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Saied, Mazen ^a   Foussadier, Franck ^b   Belledent, Jérôme ^c   Trouiller, Yorick ^d   Schanen, Isabelle ^e   Yesilada, Emek ^a   Gardin, Christian ^a   Urbani, Jean Christophe ^b   Sundermann, Frank ^b   Robert, Frédéric ^b   Couderc, Christophe ^c   Vautrin, Florent ^b   LeCam, Laurent ^c   Kerrien, Gurwan ^b   Planchot, Jonathan ^b   Martinelli, Catherine ^b   Wilkinson, Bill ^a   Rody, Yves ^c   Borjon, Amandine ^c   Morgana, Nicolo ^a   Di Maria, Jean Luc ^d   Farys, Vincent ^b   more..

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b STMICROELECTRONICS   (France)

^c NXP SEMICONDUCTORS   (France)

^d CEA LETI   (France)

^e IMEP LAHC   (France)

Author keywords

Abbe formulation; Corner rounding; Hopkins; Normal incidence; Oblique incidence; Off axis illumination; OPC modeling

Indexed keywords

COMPUTATIONAL COMPLEXITY; COMPUTER SIMULATION; ELECTROMAGNETISM; LIGHTING; SEMICONDUCTOR DEVICES;

ABBE FORMULATION; CORNER ROUNDING; NORMAL INCIDENCE; OBLIQUE INCIDENCE; OFF-AXIS ILLUMINATION; OPC MODELING;

MASKS;

EID: 42149103980     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.752613     Document Type: Conference Paper

References (8)

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3. Yuri Aksenov et al., "Compensation of high-NA mask topography effects by using object modified Kirchhoff model for 65 and 45nm nodes", Proc. of SPIE Vol. 6154, 2006
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