Recent developments in high brightness LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6910, Issue , 2008, Pages

  Chen, T P ^a   Yao, C L ^a   Wu, C Y ^a   Yeh, J H ^a   Wang, C W ^a   Hsieh, M H ^a  

^a EPISTAR CORPORATION   (Taiwan)

Author keywords

Internal quantum efficiency; LED; Light extraction efficiency; Surface texturing; Thermal resistance

Indexed keywords

COMPUTER NETWORKS; CURRENT DENSITY; EXTRACTION; HEALTH; INDUSTRIAL RESEARCH; LIGHT EMISSION; LUMINANCE; METAL RECOVERY; OHMIC CONTACTS; OPTICAL PROPERTIES; PIGMENTS; SOLVENT EXTRACTION; SURFACE STRUCTURE; TECHNOLOGY; THERMOELECTRICITY;

ALGAINN; ALGAINP; CURRENT SPREADING; HIGH BRIGHTNESS LEDS (HBLED); HIGH POWERS; HIGH-CURRENT-DENSITY (HCD); HIGH-THERMAL CONDUCTIVITY; INTERNAL QUANTUM EFFICIENCY (IQE); LED CHIPS; LIGHT EXTRACTION EFFICIENCY; LIGHT-EMITTING DIODES; METAL LINES; NANO IMPRINTS; NARROW WIDTH; OPERATION CONDITIONS; SAPPHIRE SUBSTRATES; SURFACE TEXTURING; ULTRA HIGH BRIGHTNESS;

LIGHT EMITTING DIODES;

EID: 42149100438     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.768607     Document Type: Conference Paper

References (4)

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