Scalability of buried micro-reflector light emitting diodes for high-current applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4996, Issue , 2003, Pages 18-25

  Illek, S ^a   Pietzonka, I ^a   Plossl A ^a   Stauss, P ^a   Wegleiter, W ^a   Windisch, R ^a   Wirth, R ^a   Zull, H ^a   Streubel, K ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

AlGaInP; High current; High efficiency; LEDs; Light extraction; Light emitting diodes; Thin film

Indexed keywords

ALUMINUM COMPOUNDS; HEAT SINKS; LIGHT REFLECTION; THIN FILMS;

THERMAL FLATTENING;

LIGHT EMITTING DIODES;

EID: 0141455505     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476550     Document Type: Conference Paper

References (4)

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3. W. Schmid, M. Scherer, R. Jäger, P. Stauss, K. Streubel, and K. J. Ebeling, "Efficient light-emitting diodes with radial outcoupling taper at 980 and 630 nm emission wavelength", in Proc. SPIE LEDs: Research, Manufacturing and Applications V, Vol. 4278, 2001, pp 109-118
4. S. Illek, U. Jakob, A. Plößl, P. Stauss, K. Streubel, W. Wegleiter, and R. Wirth, "Buried micro-reflectors boost performance of AlGaInP LEDs", Compound Semiconductor, vol. 8 Nr.1, pp. 39-42, 2002.