Theoretical analysis of a low dispersion SiGe LNA for ultra-wideband applications

IEEE Microwave and Wireless Components Letters

Volumn 16, Issue 9, 2006, Pages 517-519

  Park, Yunseo ^a,b   Lee, Chang Ho ^a,b   Cressler, John D ^a,b   Laskar, Joy ^a,b  

^a IEEE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Group delay variation; Low noise amplifier (LNA); Noise figure; SiGe heterojunction bipolar transistor (HBT); Ultra wideband (UWB)

Indexed keywords

GROUP DELAY VARIATION; LOW NOISE AMPLIFIERS (LNA); NOISE FIGURE; ULTRA WIDEBAND (UWB);

ENERGY DISSIPATION; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SPURIOUS SIGNAL NOISE;

POWER AMPLIFIERS;

EID: 33748368280     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.880698     Document Type: Review

References (9)

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