Fatigue of single crystalline silicon: Mechanical behaviour and TEM observations

Materials Science and Engineering: A

Volumn 483-484, Issue 1-2 C, 2008, Pages 353-364

  Legros, Marc ^a   Ferry, Olivier ^b   Houdellier, Florent ^a   Jacques, Alain ^b   George, Amand ^b  

^a CEMES CNRS   (France)

^b INSTITUT JEAN LAMOUR   (France)

Author keywords

Dislocation patterns; Fatigue; Mechanical behaviour; Microstructure; Silicon; Transmission electron microscopy

Indexed keywords

COMPRESSIVE STRESS; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); FATIGUE OF MATERIALS; HARDENING; SINGLE CRYSTALS; STRAIN RATE; STRESS CONCENTRATION; TENSILE STRESS;

DISLOCATION GLIDE; LATTICE FRICTION; STRAIN LOCALIZATION;

SILICON;

COMPRESSIVE STRESS; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); FATIGUE OF MATERIALS; HARDENING; SILICON; SINGLE CRYSTALS; STRAIN RATE; STRESS CONCENTRATION; TENSILE STRESS;

EID: 41849125682     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2006.10.200     Document Type: Article

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