Redistribution of recombination active defects and trapping effects in multicrystalline silicon after wet thermal oxidation

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 1, Issue , 2006, Pages 956-959

  Riepe, S ^a   Schultz, O ^a   Warta, W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRON TRAPS; GRAIN BOUNDARIES; IRON COMPOUNDS; THERMOOXIDATION;

INTERSTITIAL IRON; MULTICRYSTALLINE SILICON; SILICON BLOCK MATERIALS; WET THERMAL OXIDATION;

POLYSILICON;

EID: 41749121197     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279615     Document Type: Conference Paper

References (4)

1. J. Isenberg, S. Riepe, S. Glunz et al., Journal of Appl. Phys. 93 (7), 2003, pp. 4268 - 4275
2. th EPVSEC, 2005
3. D.H. Macdonald, L.J. Geerligs et al., Journal of Appl. Phys. 95 (3), 2004, pp. 1021 -1028
4. S. Rein, "Lifetime Spectroscopy", Springer Series in Mat. Science, Springer, Berlin-Heidelberg, 2005