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Volumn 1, Issue , 2006, Pages 849-852

Dilute nitride III-V superlattices lattice-matched to silicon

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM COMPOUNDS; NITRIDES; SILICON;

EID: 41749102168     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279590     Document Type: Conference Paper
Times cited : (2)

References (13)
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    • x superlattices lattice matched to InP(001): A material for 0.4-0.6 eV midinfrared applications
    • Art.#73309-1-4
    • x superlattices lattice matched to InP(001): a material for 0.4-0.6 eV midinfrared applications", Phys. Rev. B. 72, 2005, Art.#73309-1-4.
    • (2005) Phys. Rev. B , vol.72
    • Bhusal, L.1    Alemu, A.2    Freundlich, A.3
  • 5
    • 0023042985 scopus 로고
    • Stability of semiconductor strained -layer superlattices
    • R. Hull et al, "Stability of semiconductor strained -layer superlattices" Appl. Phys. Lett. 48, (1986) 56-58
    • (1986) Appl. Phys. Lett , vol.48 , pp. 56-58
    • Hull, R.1
  • 6
    • 41749104471 scopus 로고    scopus 로고
    • Dilute Nitride III-V Superlattice Lattice-matched to Si(001) for 1.5-1.8eV photonic applications
    • press
    • L. Bhusal, W. Zhu, and A. Freundlich "Dilute Nitride III-V Superlattice Lattice-matched to Si(001) for 1.5-1.8eV photonic applications", Proc. MRS Spring, Symp 1, 2006 in press.
    • Proc. MRS Spring, Symp , vol.1 , Issue.2006
    • Bhusal, L.1    Zhu, W.2    Freundlich, A.3
  • 10
    • 2342565148 scopus 로고    scopus 로고
    • Band alignments and quantum confinement in (111) GaAsN /InAs strain-balanced nanostructures
    • L.Bhusal, A. Alemu and A. Freundlich, "Band alignments and quantum confinement in (111) GaAsN /InAs strain-balanced nanostructures", Nanotechnology, 15, 2004, pp. 245-9.
    • (2004) Nanotechnology , vol.15 , pp. 245-249
    • Bhusal, L.1    Alemu, A.2    Freundlich, A.3
  • 11
    • 0001428924 scopus 로고    scopus 로고
    • Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitais
    • S. H. Wei and A. Zunger, "Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitais", Appl. Phys. Lett. 72, 1998, pp. 2011-3.
    • (1998) Appl. Phys. Lett , vol.72 , pp. 2011-2013
    • Wei, S.H.1    Zunger, A.2
  • 13
    • 23844549290 scopus 로고    scopus 로고
    • High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radiofrequency plasma source
    • Art.#023522-1-5
    • M.A. Pinault, A. Freundlich, A. Coaquira and A. Fotkatzikis, "High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radiofrequency plasma source" J. Appl. Phys. 98(2), 2005, Art.#023522-1-5
    • (2005) J. Appl. Phys , vol.98 , Issue.2
    • Pinault, M.A.1    Freundlich, A.2    Coaquira, A.3    Fotkatzikis, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.