-
1
-
-
0040158517
-
0.02 quantum-well structure lattice- matched to a Si substrate
-
PP
-
0.02 quantum-well structure lattice- matched to a Si substrate", Appl. Phys. Lett. 79, 2001, PP. 1306-8.
-
(2001)
Appl. Phys. Lett
, vol.79
, pp. 1306-1308
-
-
Fujimoto, Y.1
Yonezu, H.2
Utsumi, A.3
Momose, K.4
Furukawa, Y.5
-
3
-
-
0343808605
-
Chemical beam epitaxy of strain balanced GaP/GaAs/InP/GaAs superlattices
-
A.H. Bensaoula, A. Freundlich, A. Bensaoula, V. Rossignol, and A. Ponchet, "Chemical beam epitaxy of strain balanced GaP/GaAs/InP/GaAs superlattices", J. Vac. Sci. Technol B, 12, 1994, 1110-2.
-
(1994)
J. Vac. Sci. Technol B
, vol.12
, pp. 1110-1112
-
-
Bensaoula, A.H.1
Freundlich, A.2
Bensaoula, A.3
Rossignol, V.4
Ponchet, A.5
-
4
-
-
33644947605
-
x superlattices lattice matched to InP(001): A material for 0.4-0.6 eV midinfrared applications
-
Art.#73309-1-4
-
x superlattices lattice matched to InP(001): a material for 0.4-0.6 eV midinfrared applications", Phys. Rev. B. 72, 2005, Art.#73309-1-4.
-
(2005)
Phys. Rev. B
, vol.72
-
-
Bhusal, L.1
Alemu, A.2
Freundlich, A.3
-
5
-
-
0023042985
-
Stability of semiconductor strained -layer superlattices
-
R. Hull et al, "Stability of semiconductor strained -layer superlattices" Appl. Phys. Lett. 48, (1986) 56-58
-
(1986)
Appl. Phys. Lett
, vol.48
, pp. 56-58
-
-
Hull, R.1
-
6
-
-
41749104471
-
Dilute Nitride III-V Superlattice Lattice-matched to Si(001) for 1.5-1.8eV photonic applications
-
press
-
L. Bhusal, W. Zhu, and A. Freundlich "Dilute Nitride III-V Superlattice Lattice-matched to Si(001) for 1.5-1.8eV photonic applications", Proc. MRS Spring, Symp 1, 2006 in press.
-
Proc. MRS Spring, Symp
, vol.1
, Issue.2006
-
-
Bhusal, L.1
Zhu, W.2
Freundlich, A.3
-
7
-
-
0001243688
-
Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
-
K. M. Yu, W. Walukiewicz, W. Shan, J. W. Ager III, J. Wu, E. E. Haller, J. F. Geisz, D. J. Friedman, and J. M. Olson, "Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys", Phys. Rev. B. 61, 2000, pp. 13337-40.
-
(2000)
Phys. Rev. B
, vol.61
, pp. 13337-13340
-
-
Yu, K.M.1
Walukiewicz, W.2
Shan, W.3
Ager III, J.W.4
Wu, J.5
Haller, E.E.6
Geisz, J.F.7
Friedman, D.J.8
Olson, J.M.9
-
8
-
-
0036492747
-
Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells
-
C. Skierbiszewski, S. P. Lepkowski, P. Perlin, T. Suski, W. Jantsch, and J. Geisz, "Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells", Physica 13, 2002, 1078-81.
-
(2002)
Physica
, vol.13
, pp. 1078-1081
-
-
Skierbiszewski, C.1
Lepkowski, S.P.2
Perlin, P.3
Suski, T.4
Jantsch, W.5
Geisz, J.6
-
10
-
-
2342565148
-
Band alignments and quantum confinement in (111) GaAsN /InAs strain-balanced nanostructures
-
L.Bhusal, A. Alemu and A. Freundlich, "Band alignments and quantum confinement in (111) GaAsN /InAs strain-balanced nanostructures", Nanotechnology, 15, 2004, pp. 245-9.
-
(2004)
Nanotechnology
, vol.15
, pp. 245-249
-
-
Bhusal, L.1
Alemu, A.2
Freundlich, A.3
-
11
-
-
0001428924
-
Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitais
-
S. H. Wei and A. Zunger, "Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitais", Appl. Phys. Lett. 72, 1998, pp. 2011-3.
-
(1998)
Appl. Phys. Lett
, vol.72
, pp. 2011-2013
-
-
Wei, S.H.1
Zunger, A.2
-
13
-
-
23844549290
-
High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radiofrequency plasma source
-
Art.#023522-1-5
-
M.A. Pinault, A. Freundlich, A. Coaquira and A. Fotkatzikis, "High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radiofrequency plasma source" J. Appl. Phys. 98(2), 2005, Art.#023522-1-5
-
(2005)
J. Appl. Phys
, vol.98
, Issue.2
-
-
Pinault, M.A.1
Freundlich, A.2
Coaquira, A.3
Fotkatzikis, A.4
|