Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth

Applied Physics Letters

Volumn 82, Issue 8, 2003, Pages 1227-1229

  Fujiwara, Hiroyuki ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELLIPSOMETRY; EPITAXIAL GROWTH; HALL EFFECT; INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SILICON;

SURFACE DEFECTS;

MOLECULAR PHYSICS;

EID: 0037463288     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1557315     Document Type: Article

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