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Volumn , Issue , 2006, Pages 75-78

Design and analysis of a 34 dBm Ka-band GaN high power amplifier MMIC

Author keywords

GaN; MMIC power amplifiers

Indexed keywords

CIRCUIT SIMULATION; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; PASSIVE NETWORKS; POWER AMPLIFIERS;

EID: 41549148721     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2006.282754     Document Type: Conference Paper
Times cited : (7)

References (8)
  • 1
    • 0001856221 scopus 로고    scopus 로고
    • Experimental Power and Frequency Limits of AlGaN/GaN HEMTs
    • Seattle, pp
    • L.F. Eastman. "Experimental Power and Frequency Limits of AlGaN/GaN HEMTs", IEEE MTT-S Int. Microwave Symposium. 2002, Seattle, pp. 2273-2275.
    • (2002) IEEE MTT-S Int. Microwave Symposium , pp. 2273-2275
    • Eastman, L.F.1
  • 4
    • 0842288134 scopus 로고    scopus 로고
    • K. Boutros, M. Regan, P. Rowell, D. Gotthold, R. Birkhahn, B. Brar, High Performance GaN HEMTs at 40 GHz with Power Density of 2.8W/mm, IEDM Tech. Dig. 2003, Washington D.C., pp. 12.5.1-12.5.2.
    • K. Boutros, M. Regan, P. Rowell, D. Gotthold, R. Birkhahn, B. Brar, "High Performance GaN HEMTs at 40 GHz with Power Density of 2.8W/mm", IEDM Tech. Dig. 2003, Washington D.C., pp. 12.5.1-12.5.2.
  • 7
    • 0043166426 scopus 로고    scopus 로고
    • Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications
    • Philadelphia, pp
    • F. van Raay, R. Quay, R. Kiefer, M. Schlechtweg and G. Weimann, "Large signal modeling of AlGaN/GaN HEMTs with Psat > 4 W/mm at 30 GHz suitable for broadband power applications", MTT-S Int. Microwave Symposium. 2003, Philadelphia, pp. 451-454.
    • (2003) MTT-S Int. Microwave Symposium , pp. 451-454
    • van Raay, F.1    Quay, R.2    Kiefer, R.3    Schlechtweg, M.4    Weimann, G.5
  • 8
    • 33847280583 scopus 로고    scopus 로고
    • M. van Heijningen, F.F.. van Vliet, R. Quay, F. van Raay, R. Kiefer, S. Muller, D. Krausse, M. Seelmann-Eggebert, M. Mikulla and M. Schlechtweg, Ka-Band AlGaN/GaN HEMT High Power and Driver Amplifier MMICs, Proc. GAAS 2005, Paris, pp. 237-240.
    • M. van Heijningen, F.F.. van Vliet, R. Quay, F. van Raay, R. Kiefer, S. Muller, D. Krausse, M. Seelmann-Eggebert, M. Mikulla and M. Schlechtweg, "Ka-Band AlGaN/GaN HEMT High Power and Driver Amplifier MMICs", Proc. GAAS 2005, Paris, pp. 237-240.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.