Angle-resolved XPS structural investigation of GaAs surfaces

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1576-1582

  Negrila, C C ^a   Logofatu, C ^a   Ghita, R V ^a   Cotirlan, C ^a   Ungureanu, F ^a   Manea, A S ^a   Lazarescu, M F ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

A1. Characterization; A1. Etching; A1. Surfaces; B1. Inorganic compounds; B2. Semiconducting gallium arsenide

Indexed keywords

ANGLE MEASUREMENT; ETCHING; INORGANIC COMPOUNDS; OXIDATION; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

NATIVE OXIDE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 41549118157     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.001     Document Type: Article

References (10)

1. In: Fukuda M. (Ed). Reliability and Degradation of Semiconductor Lasers and LEDs (1991), Artech House, Boston, London 301
2. Sullivan J.L., Yu W., and Saied S.O. Sur. Interface Anal. 22 (1994) 515
3. Freiberger General Specifications, Issue 2000 〈http://www.fem-semicond.com/pdf/gen.spec.pdf〉.
4. Lenczycki C.T., and Burrows A. Thin Solid Films 193-194 1-2 (1990) 610
5. D. Gräf, M. Grunder, D. Lüdecke, R. Schulz 8 (1990) 1955.
6. Surdu-Bob C.C., Saied S.O., and Sullivan J.L. Appl. Surf. Sci. 183 (2001) 126
7. Pan J.S., Wee A.T.S., Huan C.H.A., Tan H.S., and Tan K.L. J. Phys. D: Appl. Phys. 30 (1997) 2514
8. Massies J., and Contour J.P. J. Appl. Phys. 58 2 (1985) 806
9. Ghita R.V., Negrila C., Manea A.S., Logofatu C., Cernea M., and Lazarescu M.F. J. Optoelectron. Adv. Mater. 5 4 (2003) 859
10. Moulder J.F., Stickle W.F., Sobol P.E., and Bombek K.D. Handbook of X-ray Photoelectron Spectroscopy (1992), Perkin-Elmer Co., Minnesota