Observation of deep level defects within the waveguide of red-emitting high-power diode lasers

Applied Physics Letters

Volumn 88, Issue 13, 2006, Pages

  Ropers, Claus ^a   Tien, Tran Quoc ^a   Lienau, Christoph ^a   Tomm, Jens W ^a   Brick, Peter ^b   Linder, Norbert ^b   Mayer, Bernd ^b   Müller, Martin ^b   Tautz, Sönke ^b   Schmid, Wolfgang ^b  

^a MAX BORN INSTITUT   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; PHOTOCURRENTS; PHOTOELECTRICITY; WAVEGUIDES;

DEEP LEVEL DEFECTS; EPITAXIAL LAYERS; NEAR-FIELD OPTICAL BEAM INDUCED CURRENT (NOBIC); PHOTOCURRENT SPECTROSCOPY;

SEMICONDUCTOR LASERS;

EID: 33645501729     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2190815     Document Type: Article

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