Crystal growth of large-diameter bulk CdTe on GaAs wafer seed plates

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2058-2061

  Mullins, J T ^a   Cantwell, B J ^a   Basu, A ^a   Jiang, Q ^b   Choubey, A ^b   Brinkman, A W ^b  

^a Durham Scientific Crystals Ltd   (United States)

^b DURHAM UNIVERSITY   (United Kingdom)

Author keywords

A1. X ray diffraction; A2. Growth from vapour; A3. Physical vapour deposition process; B2. Semiconductor II VI materials

Indexed keywords

CONCENTRATION (PROCESS); INFRARED ABSORPTION; PHYSICAL VAPOR DEPOSITION; THICKNESS MEASUREMENT; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

PHYSICAL VAPOUR TRANSPORT; WAFER SEED PLATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 41449090755     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.190     Document Type: Article

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