Inclusions in LEC-grown Si GaAs single crystals

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1410-1417

  Eichler, S ^a   Fliegel, W ^a   Jurisch, M ^a   Kohler A ^a   Naumann, M ^b   Rockoff, A ^a  

^a FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Volume defects; A2. LEC; B1. Gallium arsenide; B2. Semiinsulating gallium arsenide; B3. Tansistors

Indexed keywords

LIGHT SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SILICON COMPOUNDS; TOMOGRAPHY;

LASER SCATTERING TOMOGRAPHY (LST); SURFACE FLAWS;

SINGLE CRYSTALS;

EID: 41449083652     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.159     Document Type: Article

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