Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining

Review of Scientific Instruments

Volumn 78, Issue 8, 2007, Pages

  Sano, Yasuhisa ^a   Yamamura, Kazuya ^a   Mimura, Hidekazu ^a   Yamauchi, Kazuto ^a   Mori, Yuzo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ELECTRIC INSULATORS; NUMERICAL METHODS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; VAPORIZATION;

PLASMA CHEMICAL VAPORIZATION MACHINING (PCVM);

MOSFET DEVICES;

SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; COMPUTER AIDED DESIGN; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; GAS; HEAT; INSTRUMENTATION; MATHEMATICAL COMPUTING; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; REPRODUCIBILITY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY;

COMPUTER-AIDED DESIGN; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GASES; HEAT; MEMBRANES, ARTIFICIAL; MICROELECTRODES; NANOTECHNOLOGY; NUMERICAL ANALYSIS, COMPUTER-ASSISTED; REPRODUCIBILITY OF RESULTS; SENSITIVITY AND SPECIFICITY; SILICON; TRANSISTORS;

EID: 34548434786     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2766836     Document Type: Article

References (7)

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