Current-driven switching in a single exchange-biased ferromagnetic layer

Physical Review Letters

Volumn 93, Issue 2, 2004, Pages

  Chen, T Y ^a   Ji, Y ^a   Chien, C L ^a   Stiles, M D ^b  

^a JOHNS HOPKINS UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; CURRENT DENSITY; ELECTRIC RESISTANCE; GIANT MAGNETORESISTANCE; HYSTERESIS; MAGNETIC ANISOTROPY; MAGNETIC DOMAINS; MAGNETIC FIELDS; MAGNETIZATION; MAGNETOSTRICTION; MULTILAYERS; OXIDATION; POINT CONTACTS;

DOMAIN WALL MAGNETORESISTANCE (DMR); NANODOMAINS; SPIN-TRANSFER TORQUE (STT) EFFECTS; SWITCHING CURRENTS;

FERROMAGNETIC MATERIALS;

EID: 4143098220     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.026601     Document Type: Article

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