Molecular beam epitaxial growth of site-controlled InAs quantum dot arrays using templates fabricated by the Nano-Jet Probe method

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 1794-1796

  Ohkouchi, S ^a,b   Sugimoto, Y ^c,d   Ozaki, N ^c   Ishikawa, H ^a   Asakawa, K ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NEC CORPORATION   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Atomic force microscope; InAs; Quantum dots; Site control

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY;

NANO-JET PROBES; NANODOTS; SITE CONTROL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 41349118719     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.08.070     Document Type: Article

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