First-principles study of doped Si and Ge nanowires

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 2169-2171

  Peelaers, H ^a   Partoens, B ^a   Peeters, F M ^a  

^a UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

Formation energies; Nanowires; Segregation

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRONS; GERMANIUM; SILICON;

DANGLING BOND; FORMATION ENERGIES;

NANOWIRES;

EID: 41349104746     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.10.090     Document Type: Article

References (8)

1. Cui Y., Wei Q., Park H., and Lieber C.M. Science 293 (2001) 1289
2. Wu Y., Cui Y., et al. Nano Lett. 4 (2004) 433
3. Jagannathan H., et al. J. Appl. Phys. 100 (2006) 024318
4. Gonze X., et al. Comput. Mater. Sci. 25 (2002) 478
5. Peelaers H., Partoens B., and Peeters F.M. Nano Lett. 6 (2006) 2781
6. Peelaers H., Partoens B., and Peeters F.M. Appl. Phys. Lett. 90 (2007) 263103
7. Fernández-Serra M.V., Adessi C., and Blase X. Phys. Rev. Lett. 96 (2006) 166805
8. Cui Y., Duan X., Hu J., and Lieber C.M. J. Phys. Chem. B 104 (2000) 5213