Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 1828-1831

  Gartner A ^a   Schuh, D ^b,c   Holleitner, A W ^a,c   Kotthaus, J P ^a  

^a UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Double quantum wells; Excitons; III V Semiconductors; Low dimensional system

Indexed keywords

ELECTRON TRAPS; ELECTROSTATICS; EXCITONS; HETEROJUNCTIONS; LASER EXCITATION; SEMICONDUCTING GALLIUM ARSENIDE;

DOUBLE QUANTUM WELLS; ELECTROSTATIC TRAPS; INDIRECT EXCITONS; LOW-DIMENSIONAL SYSTEMS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 41349102732     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.10.042     Document Type: Article

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