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Volumn 59, Issue 4, 1999, Pages 2722-2725

Tight-binding scheme for impurity states in semiconductors

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Indexed keywords


EID: 0001643990     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.2722     Document Type: Article
Times cited : (22)

References (23)
  • 6
    • 85037916594 scopus 로고    scopus 로고
    • For deep levels, the impurity is often accompanied by significant lattice relaxations. Such effects are not considered in the present version of this theory
    • For deep levels, the impurity is often accompanied by significant lattice relaxations. Such effects are not considered in the present version of this theory.
  • 14
    • 85037890911 scopus 로고    scopus 로고
    • edited by R. K. Willardson and A. C. Beer (Academic, New York, 1975), 10
    • Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1975), Vol. 10.
  • 16
    • 85037890591 scopus 로고    scopus 로고
    • Our, calculations are based on the local-density-functional and pseudopotential approximations with conjugate-gradient minimization of the electronic energy. Cubic supercells with 64 atoms and plane-wave expansions with a cutoff energy of 20 Ry for Ge and 40 Ry for C are used. The central-cell correction is estimated by subtracting the average potential around the impurity from the same quantity around an As atom in the host material
    • Our ab initio calculations are based on the local-density-functional and pseudopotential approximations with conjugate-gradient minimization of the electronic energy. Cubic supercells with 64 atoms and plane-wave expansions with a cutoff energy of 20 Ry for Ge and 40 Ry for C are used. The central-cell correction is estimated by subtracting the average potential around the impurity from the same quantity around an As atom in the host material.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.