Terahertz quantum cascade laser at 3.39 THz

Chinese Physics Letters

Volumn 25, Issue 3, 2008, Pages 953-956

  Cao, Jun Cheng ^a   Li, Hua ^a   Han, Ying Jun ^a   Tan, Zhi Yong ^a   Lü, Jing Tao ^a   Luo, Hui ^b   Laframboise, Sylvain ^b   Liu, Hui Chun ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; QUANTUM CASCADE LASERS; THRESHOLD CURRENT DENSITY; X RAY DIFFRACTION;

ACTIVE REGIONS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; GAS-SOURCE MOLECULAR BEAM EPITAXY; HIGH-CRYSTALLINE QUALITY; MICROSCOPIC MEASUREMENT; SHARP INTERFACE; TERAHERTZ QUANTUM-CASCADE LASERS; TRANSMISSION ELECTRON; TRANSMISSION ELECTRON MICROSCOPY IMAGES; X- RAY DIFFRACTIONS;

GAS SOURCE MOLECULAR BEAM EPITAXY;

EID: 41149129378     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/3/040     Document Type: Article

References (19)

1. Köhler R, Tredicucci A, Beltram F, Beere H, Linfield E, Davies A, Ritchie D, Iotti R and Rossi F 2002 Nature 417 156
2. Siegel P H 2002 IEEE Trans. Microwave Theor. Technol. 50 910
3. Capasso F, Paiella F R, Martini R, Colombelli R, Gmachl C, Myers T L, Taubman M S, Williams R M, Bethea C G, Unterrainer K, Hwang H Y, Sivco D L, Cho A Y, Sergent A M, Liu H C and Whittaker E A 2002 J. Quantum Electron. 38 511
4. Cao J C 2003 Phys. Rev. Lett. 91 237401
5. Darmo J, Tamosiunas V, Fasching G, Kroll J, Unterrainer K, Beck M, Giovannini M, Faist J, Kremser C and Debbage P 2004 Opt. Express 12 1879
6. Faist J, Capasso F, Sivco D, Sirtori C, Hutchinson A L and Cho A 1994 Science 264 553
7. Rochat M, Ajili L, Willenberg H, Faist J, Beere H, Davies G, Linfield E and Ritchie D 2002 Appl. Phys. Lett. 81 1381
8. Köhler R, Tredicucci A, Beltram F, Beere H E, Linfield E H, Davies A G, Ritchie D A, Dhillon S S and Sirtori C 2003 Appl. Phys. Lett. 82 1518
9. Williams B S, Kumar S, Callebaut H, Hu Q and Reno J L 2003 Appl. Phys. Lett. 83 2124
10. Williams B S, Kumar S, Callebaut H, Hu Q and Reno J L 2003 Appl. Phys. Lett. 83 5142
11. Williams B S, Kumar S, Hu Q and Reno J L 2004 Electron. Lett. 40 431
12. Williams B S, Kumar S, Hu Q and Reno J L 2005 Opt. Express 13 3331
13. Lü J T and Cao J C 2006 Appl. Phys. Lett. 88 061119
14. Beere H E, Fowler J C, Alton J et al 2005 J. Crystal Growth 278 756
15. Huang G S, Liu T C, Yao H H, Kuo H C, Wang S C et al 2007 J. Crystal Growth 298 687
16. Liu H C, Wächter M, Ban D, Wasilewski Z R, Buchanan M, Aers G C, Cao J C, Feng S L, Williams B S and Hu Q 2005 Appl. Phys. Lett. 87 141102
17. Alton J, Barbieri S, Beere H E, Fowler J, Linfield E H and Ritchie D A 2004 Proc. SPIE 5354 129
18. Ban D, W?chter M, Liu H C, Wasilewski Z R, Buchanan M and Aers G C 2006 J. Vac. Sci. Technol. A 24 778
19. Walther C, Scalari G, Fasit J, Beere H and Ritchie D 2006 Appl. Phys. Lett. 89 231121