Epitaxy of emitters on p- and n-type substrates for crystalline silicon solar cells

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 1, Issue , 2006, Pages 1111-1114

  Schmich, E ^a   Reber, S ^a   Hees, J ^a   Lautenschlager, H ^a   Schillinger, N ^a   Willeke, G ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; SILICON WAFERS; SUBSTRATES;

CRYSTALLINE SILICON SOLAR CELLS; DOPING PROFILES; EPITAXIAL EMITTERS;

SILICON SOLAR CELLS;

EID: 41749107714     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279355     Document Type: Conference Paper

References (10)

1. D. Biro, "Durchlaufdiffusion für die Photovoltaik", Dissertation, Freiburg, 2003
2. rd WCPEC, Osaka, 2003, pp. 913
3. th EPVSEC, Barcelona, 2005, pp.594
4. F.R. Faller, A. Hurrle, " High-Temperature CVD for Crystalline-Silicon Thin-Film Solar Cells", IEEE Transactions on Electron Devices 46 (10), 1999, pp.2048
5. rd WCPEC, Osaka, 2003, pp. 1368
6. M. A. Green, Solar cells, Operating Principles, Technology and System Applications, Prentice-Hall, 1982, p.147
7. th EPVSEC, Munich, 2001, pp. 1612
8. J. Hees, "Durchlauf-Siliziumepitaxie für kristalline Silizium-Dünnschichtsolarzellen", Diploma thesis, Furthwangen, 2006
9. O. Schultz, S. Riepe, S. W. Glunz, "Influence of high-temperature processes on multicrystalline silicon", Solid State Phenomena 95-96, 2004, pp.235
10. Götzberger, Voß, Knobloch, "Sonnenenergie: Photovoltaik", B. G. Teubner Stuttgart, 1993, p.107