Ionization of xenon Rydberg atoms at oxidized Si(1 0 0) surfaces

Surface Science

Volumn 602, Issue 7, 2008, Pages 1306-1312

  Neufeld, D D ^a   Dunham, H R ^a   Wethekam, S ^b   Lancaster, J C ^a   Dunning, F B ^a  

^a RICE UNIVERSITY   (United States)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

Field ionization; Insulating surfaces; Ion solid interactions; Semiconducting surfaces; Silicon; Silicon oxides; Single crystal surfaces; Surface electronic phenomena

Indexed keywords

IONIZATION; MATHEMATICAL MODELS; OXIDES; RYDBERG STATES; SILICON COMPOUNDS;

INSULATING SURFACES; ION SOLID INTERACTIONS; SURFACE ELECTRONIC PHENOMENA;

XENON;

EID: 41049089051     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.12.042     Document Type: Article

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