Electrical and optical properties of V2 O5 micro-nano structures grown by direct vapor phase deposition method

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Hullavarad, Nilima V ^a   Hullavarad, Shiva S ^a   Karulkar, Pramod C ^a,b  

^a UNIVERSITY OF ALASKA FAIRBANKS   (United States)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACIAL ENERGY; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; VANADIUM COMPOUNDS;

MINIATURIZED DEVICES; PHOTOLUMINESCENCE INTENSITY; VANADIUM PENTAOXIDE;

NANOSTRUCTURES;

EID: 40549140832     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2840469     Document Type: Article

References (55)

1. S. Surnev, M. G. Ramsey, and F. P. Netzer, Prog. Surf. Sci. PSSFBP 0079-6816 10.1016/j.progsurf.2003.09.001, 73, 117 (2003).
2. Y. Wang and G. Cao, Chem. Mater. CMATEX 0897-4756 10.1021/cm052765h, 18, 2787 (2006).
3. J. Livage, Chem. Mater. CMATEX 0897-4756 10.1021/cm00016a006, 3, 578 (1991).
4. C. Karunakaran and S. Senthilvelan, J. Colloid Interface Sci. JCISA5 0021-9797 10.1016/j.jcis.2005.03.071, 289, 466 (2005).
5. S. J. Yoo, J. W. Lim, and Y. E. Sung, Sol. Energy Mater. Sol. Cells SEMCEQ 0927-0248 10.1016/j.solmat.2005.04.033, 90, 477 (2006).
6. V. Venugopal, Biosens. Bioelectron. BBIOE4 0956-5663 10.1016/S0956- 5663(01)00180-4, 17, 147 (2002).
7. G. Preti, J. N. Labows, J. G. Kostelc, S. Aldinger, and R. Daniele, J. Chromatogr. JOCRAM 0021-9673, 432, 1 (1988).
8. G. Gu, M. Schmid, P. W. Chiu, A. Minett, J. Fraysse, G. Kim, S. Roth, M. Kozlov, E. Munoz, and R. H. Baughman, Nat. Mater. NMAACR 1476-1122 10.1038/nmat880, 2, 316 (2003).
9. I. Raible, M. Burghard, U. Schlecht, A. Yasuda, and T. Vossmeyer, Sens. Actuators B SABCEB 0925-4005 10.1016/j.snb.2004.09.024, 106, 730 (2005).
10. S. Kan, T. Mokari, E. Rothenberg, and U. Banin, Nat. Mater. NMAACR 1476-1122 10.1038/nmat830, 2, 155 (2003).
11. M. Lira-Cantu and P. Gomez-Romero, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.1391886, 146 4139 (1999).
12. J. M. Tarascon and M. Armand, Nature (London) NATUAS 0028-0836 10.1038/35104644, 414, 359 (2001).
13. C. Patrissi and C. Martin, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.1407831, 148, A1247 (2001).
14. S. S. Hullavarad, N. V. Hullavarad, P. C. Karulkar, A. Luykx, and P. Valdivia, Nano Scale Research Letters, 2, 161 (2007). [DOI: 10.1007/s11671-007- 9048-6]
15. O. K. Tan, W. Cao, Y. Hu, and W. Zhu, Ceram. Int. CINNDH 0272-8842 10.1016/j.ceramint.2003.12.015, 30, 1127 (2004).
16. A. P. Alivisatos, Science SCIEAS 0036-8075 10.1126/science.271.5251.933, 271, 933 (1996).
17. S. Nishio and M. Kakihana, Chem. Mater. CMATEX 0897-4756 10.1021/cm0204270, 14, 3730 (2002).
18. M. A. Sobhan, M. R. Islam, and K. A. Khan, Appl. Energy APENDX 0306-2619 10.1016/S0306-2619(99)00058-6, 64, 345 (1999).
19. J. M. McGraw, J. D. Perkins, J. G. Zhang, P. Liu, P. A. Parilla, J. Turner, D. L. Schulz, C. J. Curtis, and D. S. Ginley, Solid State Ionics SSIOD3 0167-2738, 113-115, 407 (1998).
20. J. L. Guimaraes, M. Abbate, S. B. Betim, and M. C. M. Alves, J. Alloys Compd. JALCEU 0925-8388 10.1016/S0925-8388(02)01112-X, 352, 16 (2003).
21. J. Liu, X. Wang, Q. Peng, and Y. Li, Sens. Actuators B SABCEB 0925-4005 10.1016/j.snb.2005.10.012, 115, 481 (2006).
22. S. S. Hullavarad, N. V. Hullavarad, M. Mooers, and P. C. Karulkar, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172, 951, 0951-E08-08 (2007).
23. Q. Wang, K. Yu, and F. Xu, Solid State Commun. SSCOA4 0038-1098 10.1016/j.ssc.2007.05.023, 143, 260 (2007).
24. J. Zhang, Y. Yang, F. Jiang, J. Li, B. Xu, S. Wang, and X. Wang, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2006.05.034, 293, 236 (2006).
25. S. Pavasupree, Y. Suzukia, A. Kitiyanan, S. Pivsa-Art, and S. Yoshikawa, J. Solid State Electrochem. JSSEFS 1432-8488, 178, 2152 (2005).
26. A. M. Cao, J. S. Hu, H. P. Liang, and L. J. Wan, Angew. Chem., Int. Ed. ACIEF5 1433-7851 10.1002/anie.200500946, 44, 4391 (2005).
27. W. Neil, N. Ashcroft, and D. Mermin, Solid State Physics, Rinehart and Winston, New York (1976); www.el-cat.com/silicon_properties.
28. V. A. Markov, O. P. Pchelyakov, L. V. Sokolov, S. I. Stenin, and S. Stoyanov, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(91)90725-8, 250, 229 (1991).
29. M. M. R. Evans, J. C. Glueckstein, and J. Nogami, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.53.4000, 53, 4000 (1996).
30. C. Messmer and J. C. Bilello, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.329342, 52, 4623 (1981).
31. S. Hara, S. Izumi, T. Kumagai, and S. Sakai, Surf. Sci. SUSCAS 0039-6028 10.1016/j.susc.2005.03.061, 585, 17 (2005).
32. C. R. Sides and C. R. Martin, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200400517, 17, 125 (2005).
33. G. Nagasubramanian, J. Appl. Electrochem. JAELBJ 0021-891X 10.1023/A:1004113825283, 31, 99 (2001).
34. B. V. Ratnakumar, M. C. Smart, C. K. Huang, D. Perrone, S. Surampudi, and S. G. Greenbaum, Electrochim. Acta ELCAAV 0013-4686 10.1016/S0013-4686(99) 00367-9, 45, 1513 (2000).
35. Data from EDAX-TSL AMETEK, www.edax.com (last accessed Oct. 2, 2007).
36. JCPDS Data Handbook Card No. 31-1438 and 41-1426.
37. J. Galy, A. Ratuszna, J. E. Iglesias, and A. Castro, Solid State Sci. SSSCFJ 1293-2558 10.1016/j.solidstatesciences.2006.09.001, 8, 1438 (2006).
38. J. Haber, M. Witko, and R. Tokarz, Appl. Catal., A ACAGE4 0926-860X 10.1016/S0926-860X(97)00017-3, 157, 3 (1997).
39. H. J. Fan and L. D. Marks, Ultramicroscopy ULTRD6 0304-3991 10.1016/0304-3991(89)90334-3, 31, 357 (1989).
40. G. N. Karakova, G. A. Zenkovets, N. P. Fander, D. S. Su, and R. Schogel, Mater. Sci. Eng., A MSAPE3 0921-5093 10.1016/S0921-5093(02)00372-6, A343, 8 (2003).
41. H. H. Patterson, J. Cheng, S. Despres, M. Sunamoto, and M. Anpo, J. Phys. Chem. JPCHAX 0022-3654 10.1021/j100175a072, 95, 8813 (1991).
42. S. G. Zhang, S. Higiashimoto, Y. Yamashita, and M. Anpo, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp981230r, 102, 5590 (1998).
43. M. Iwamoto, H. Furukawa, K. Matsukami, T. Takenaka, and S. Kagawa, J. Am. Chem. Soc. JACSAT 0002-7863 10.1021/ja00349a066, 105, 3719 (1983).
44. C. J. Barrelet, A. B. Greytak, and C. M. Lieber, Nano Lett. NALEFD 1530-6984 10.1021/nl048739k, 4, 1981 (2004).
45. M. Anpo, I. Tanahashi, and Y. Kubokawa, J. Phys. Chem. JPCHAX 0022-3654 10.1021/j100462a026, 84, 3440 (1980).
46. Y. Kato, H. Yoshida, and T. Hattori, Phys. Chem. Chem. Phys. PPCPFQ 1463-9076 10.1039/b004233l, 2, 4231 (2000).
47. M. Anpo and M. Che, Adv. Catal. ADCAAX 0065-2342, 44, 199 (2000) and references therein.
48. Inorganic Materials, D. W. Bruce, and, D. OHare, Editors, p. 165, John Wiley and Sons, New York (1991).
49. M. Y. Afridi, J. S. Suchle, M. E. Zaghoul, D. W. Berning, A. R. Hefner, R. E. Cavicchi, S. Semancik, C. B. Montgomery, and C. J. Taylor, IEEE Sens. J. ISJEAZ 1530-437X 10.1109/JSEN.2002.807780, 2, 6 (2002).
50. J. Muster, G. T. Kim, V. Krstic, J. G. Park, Y. W. Park, S. Roth, and M. Burghard, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/(SICI)1521- 4095(200003)12:6<420::AID-ADMA4203.0.CO;2-7, 12, 420 (2000).
51. C. Garzella, E. Comini, E. Bontempi, L. E. Depero, C. Frigeri, and G. Sberveglier, Sens. Actuators B SABCEB 0925-4005 10.1016/S0925-4005(01)01046-2, 83, 230 (2002).
52. Y. Shimizu and M. Egashisa, MRS Bull. MRSBEA 0883-7694, 24, 18 (1999).
53. V. V. Dobrokhotov, D. N. McIlroy, M. G. Norton, and C. A. Berven, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/17/16/024, 17, 4135 (2006).
54. N. Yamazoe and K. Shimanoe, Sens. Actuators B SABCEB 0925-4005 10.1016/j.snb.2007.07.036, 128, 566 (2008).
55. K. Hermann, A. Michalak, and M. Witco, Catal. Today CATTEA 0920-5861 10.1016/S0920-5861(96)00171-X, 32, 321 (1996).