Plasma induced damage from via etching in pMOSFETs

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn 2002-January, Issue , 2002, Pages 114-117

  Cellere, G ^a   Valentini, M G ^b   Baraldo, A ^a   Paccagnella, A ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Electric breakdown; Etching; Fingers; Leakage current; MOSFETs; Plasma applications; Plasma devices; Plasma materials processing; Stress; Voltage

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ETCHING; LEAKAGE CURRENTS; PLASMA APPLICATIONS; PLASMA DEVICES; STRESSES;

FINGERS; HARD BREAKDOWN; MOSFETS; P-MOSFETS; PLASMA INDUCED DAMAGE; PLASMA MATERIALS-PROCESSING; PMOS FET DEVICES; SOFT BREAKDOWN;

MOSFET DEVICES;

EID: 40549122280     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPID.2002.1042622     Document Type: Conference Paper

References (14)

1. K.P.Cheung, "Plasma Charging Damage", Springer-Verlag, November 2000.
2. G. Cellere, et al., Microelectronics Reliability, 40 (2000), October 2000. pp. 1347-1352.
3. th Plasma Process-Induced Damage Symposium, 1999, pp. 73-76.
4. H.C. Lin, et al., IEEE El. Dev. Letters, 19 (3), march 1998, pp.68-72.
5. rd Symp. On Plasma Process-Induced Damage, 1998, pp. 34-37.
6. th Plasma Process-Induced Damage Symposium, 2000, pp. 10-13.
7. K. Eriguchi, et al., IEEE Trans. On El. Dev., vol. 45 (1998), pp. 160-164
8. G. Cellere, et al., 6th Plasma and Process Induced Damage Symposium (P2ID2001), pp.40-43.
9. C. Cellere, et al., submitted to IEEE Trans. on El. Dev.
10. E. Miranda, et al., IEEE Trans. On EL Dev., 47 (1), January 2000, pp. 82-88.
11. th International Reliability Physics Symposium, 2000, pp. 40-47.
12. H.A. Alam, et al., IEDM Tech. Digest, 1999.
13. S. Bruyere, et al., 2000 Int. Rel. Phys. Symp. (IRPS), pp. 48-54.
14. D. Roy, et al., 1998 Integrated Rel. Workshop Report, pp.49-54.