Aliovalent B -site modification on three- and four-layer Aurivillius intergrowth

Journal of Applied Physics

Volumn 103, Issue 4, 2008, Pages

  Wang, Wei ^a   Shan, Dan ^a   Sun, Jia Bao ^a   Mao, Xiang Yu ^a   Chen, Xiao Bing ^a  

^a YANGZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); NIOBIUM; OXYGEN VACANCIES; PIEZOELECTRICITY; REMANENCE; TUNGSTEN;

DONOR DOPING; THERMAL VARIATION;

BISMUTH COMPOUNDS;

EID: 40149096215     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838486     Document Type: Article

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