Bistable voltage transition using spin-orbit interaction in a ferromagnet-semiconductor hybrid structure

IEEE Transactions on Magnetics

Volumn 44, Issue 3, 2008, Pages 419-422

  Koo, Hyun Cheol ^a   Yi, Hyunjung ^a   Chang, Joonyeon ^a   Han, Suk Hee ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

Magnetic memories; Spin imbalance; Spin orbit interaction; Two dimensional electron gas

Indexed keywords

CHARGE DISTRIBUTION; ELECTRON MOBILITY; FERROMAGNETIC MATERIALS; MAGNETIZATION; NONVOLATILE STORAGE; SEMICONDUCTOR MATERIALS;

BISTABLE VOLTAGE TRANSITION; ELECTRON GAS LAYER; HIGH MOBILITY LAYER; MAGNETIC TUNNELING; SPIN-ORBIT INTERACTION;

HYBRID MATERIALS;

EID: 39749155741     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2007.914512     Document Type: Article

References (20)

1. G. A. Prinz, "Magnetoelectronics," Science, vol. 282, no. 5394, pp. 1660-1663, Nov. 27, 1998.
2. J. M. Daughton, "Magnetic tunneling applied to memory," J. Appl. Phys., vol. 81, pp. 3758-3763, 1997.
3. J. C. Slonczewski, "Current-driven excitation of magnetic multilayers," J. Magn. Magn. Mater., vol. 159, pp. L1-L7, 1996.
4. E. B. Myers, D. C. Ralph, J. A. Katine, R. N. Louie, and R. A. Buhrman. "Current induced switching of domains in magnetic multi-layer devices," Science, vol. 285, pp. 867-870, 1999.
5. K. Bussmann, G. A. Prinz, S.-F. Cheng, R. Bass, and D. Wang, "Switching of vertical giant magnetoresistance devices by current through the device," Appl. Phys. Lett., vol. 75, pp. 2476-2478, 1999.
6. S. Datta and B. Das, "Electronic analog of the electro-optic modulator," Appl. Phys. Lett., vol. 56, no. 7, pp. 665-667, 1990.
7. R. H. Silsbee, "Spin-orbit induced coupling of charge current and spin polarization," J. Phys. Condens. Matter, vol. 16, pp. R179-R207, 2004.
8. P. R. Hammar and M. Johnson. "Potentiometric measurements of the spin-split subbands in a two-dimensional electron gas," Phys. Rev. B, vol. 61, no. 11, pp. 7207-7210, Mar. 15, 2000.
9. P. R. Hammar, B. R. Bennett, M. J. Yang, and M. Johnson, "Observation of spin injection at a ferromagnet-semiconductor interface," Phys. Rev. Lett., vol. 83, no. 1, pp. 203-206, Jul. 5, 1999.
10. E. I. Rashba, "Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem," Phys. Rev. B, vol. 62, pp. R16267-R16270, 2000.
11. D. L. Smith and R. N. Silver. "Electrical spin injection into semiconductors," Phys. Rev. B, vol. 64, no. 4, p. 045323, Jul. 2001.
12. H. Jaffres and A. Fert, "Spin injection from a ferromagnetic metal into a semiconductor," J. Appl. Phys., vol. 91, pp. 8111-8113, 2002.
13. P. R. Hammar and M. Johnson, "Spin-dependent current transmission across a ferromagnet-insulator-two-dimensional electron gas junction," Appl. Phys. Lett., vol. 79, pp. 2591-2593, 2001.
14. K. M. lndlekofer and J. Malindretos, WinGreen-Simulation. Germany: Forschungszentrum Jülich GmbH, 2004.
15. J. H. Kwon, H. C. Koo, J. Chang, S.-H. Han, and J. Eom, "Channel width effect on the spin-orbit interaction parameter in a two-dimensional electron gas," Appl. Phys. Lett., vol. 90, p. 112505, 2007.
16. 0.48As heterostructure," Phys. Rev. Lett., vol. 78, pp. 1335-1338, 1997.
17. 1-xN/GaN heterostructures," Phys. Rev. B. vol. 65, p. 161306(R), 2002.
18. E. C. S. Stoner and E. P. Wohlfarth. "A mechanism of magnetic hysterisis in heterogeneous alloys," Phil. Trans. Roy. Soc. London, vol. A240, pp. 599-642, 1948.
19. S. Wang and H. Fujiwara, "Margin comparison of Stoner-Wohlfarth MRAM and zero total anisotropy toggle mode MRAM," IEEE Trans. Magn., vol. 42, no. 10, pp. 2727-2729, Oct. 2006.
20. E. Della Torre and E., Cardelli, "A Preisach-Stoner-Wohlfarth vector model," IEEE Trans. Magn., vol. 42, no. 10, pp. 3126-3128, Oct. 2006.