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Volumn 1, Issue , 2005, Pages 383-387

1200V Super low loss IGBT module with low noise characteristics and high di/dt controllability

Author keywords

EMI noise; Miller capacitance; Reverse recovery dVAK dt; Turn on dIC dt controllability

Indexed keywords

ACOUSTIC EMISSIONS; ACOUSTIC VARIABLES CONTROL; ELECTRIC CURRENT CARRYING CAPACITY (CABLES); ENERGY DISSIPATION; OPTIMIZATION; SPURIOUS SIGNAL NOISE;

EID: 33745891204     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2005.1518336     Document Type: Conference Paper
Times cited : (14)

References (7)
  • 2
    • 0027891679 scopus 로고
    • A 4500V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
    • M. Kitagawa, I. Omura, S. Hasegawa, T. Inoue, and A. Nakagawa, "A 4500V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor," in IEDM Tech. Dig., 1987, pp.679-682.
    • (1987) IEDM Tech. Dig. , pp. 679-682
    • Kitagawa, M.1    Omura, I.2    Hasegawa, S.3    Inoue, T.4    Nakagawa, A.5
  • 5
    • 27744438291 scopus 로고    scopus 로고
    • Great improvement in turn-on power dissipation of IGBTs with an extra gate charging function
    • th ISPSD, pp.207-210, 2005.
    • (2005) th ISPSD , pp. 207-210
    • Onozawa, Y.1    Otsuki, M.2    Seki, Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.